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| Part Number: | SIA810DJ-T1-GE3 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Vishay Siliconix |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 53mOhm @ 3.7A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 11.5 nC @ 8 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 400 pF @ 10 V |
| FET Feature: | Schottky Diode (Isolated) |
| Power Dissipation (Max): | 1.9W (Ta), 6.5W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® SC-70-6 Dual |
| Package / Case: | PowerPAK® SC-70-6 Dual |
