SI8406DB-T2-E1

SI8406DB-T2-E1

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SI8406DB-T2-E1
Description:
MOSFET N-CH 20V 16A 6MICRO FOOT
Package:
Tape & Reel (TR)
Datasheet:
SI8406DB-T2-E1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SI8406DB-T2-E1
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:33mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.77W (Ta), 13W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-Micro Foot™ (1.5x1)
Package / Case:6-UFBGA
In Stock: 0
Stock:
0 Can Ship Immediately
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