SI7485DP-T1-GE3

SI7485DP-T1-GE3

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SI7485DP-T1-GE3
Description:
MOSFET P-CH 20V 12.5A PPAK SO-8
Package:
Cut Tape (CT)
Datasheet:
SI7485DP-T1-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SI7485DP-T1-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Cut Tape (CT)
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:7.3mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 5 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
In Stock: 0
Stock:
0 Can Ship Immediately
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