SI2323DS-T1-E3

SI2323DS-T1-E3

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SI2323DS-T1-E3
Description:
MOSFET P-CH 20V 3.7A SOT23-3
Package:
Tape & Reel (TR)
Datasheet:
SI2323DS-T1-E3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SI2323DS-T1-E3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:39mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 10 V
FET Feature:-
Power Dissipation (Max):750mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 0
Stock:
0 Can Ship Immediately
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