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See Product Specifications
| Part Number: | VS-GT100TP60N |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Modules |
| Manufacturer: | Vishay General Semiconductor - Diodes Division |
| Packaging: | Bulk |
| Product Status: | Active |
| IGBT Type: | Trench |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 160 A |
| Power - Max: | 417 W |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 100A |
| Current - Collector Cutoff (Max): | 5 mA |
| Input Capacitance (Cies) @ Vce: | 7.71 nF @ 30 V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | INT-A-PAK (3 + 4) |
| Supplier Device Package: | INT-A-PAK |
