VS-EPH3006HN3

VS-EPH3006HN3

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VS-EPH3006HN3
Description:
DIODE GEN PURP 600V 30A TO247AC
Package:
Tube
Datasheet:
VS-EPH3006HN3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:VS-EPH3006HN3
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Vishay General Semiconductor - Diodes Division
Packaging:Tube
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.65 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):26 ns
Current - Reverse Leakage @ Vr:30 µA @ 600 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247AC Modified
Operating Temperature - Junction:-65°C ~ 175°C
In Stock: 0
Stock:
0 Can Ship Immediately
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For Use With
SBA320AFC_R1_00001
SBA320AFC_R1_00001
Panjit International Inc.
SURFACE MOUNT EXTREME LOW VF SCH
P2000M
P2000M
Diotec Semiconductor
DIODE STD D8X7.5 1000V 20A
SD101BWS-7-F
SD101BWS-7-F
Diodes Incorporated
DIODE SCHOTTKY 50V 15MA SOD323
FR2AAFC_R1_00001
FR2AAFC_R1_00001
Panjit International Inc.
SURFACE MOUNT FAST RECOVERY RECT
DSEP8-06B
DSEP8-06B
IXYS
DIODE GEN PURP 600V 10A TO220AC
VS-16FL40S02
VS-16FL40S02
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 16A DO203AA
S2015
S2015
Microchip Technology
STD RECTIFIER
JAN1N3671A
JAN1N3671A
Microchip Technology
DIODE GEN PURP 800V 12A DO203AA
GS3B-F1-0000
GS3B-F1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 100V 3A DO214AB
FR102G R0G
FR102G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR4L40HA0G
MUR4L40HA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
SRA860
SRA860
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 8A TO220AC
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