VB30120S-M3/4W

VB30120S-M3/4W

Images are for reference only
See Product Specifications

VB30120S-M3/4W
Description:
DIODE SCHOTTKY 30A 120V TO-263AB
Package:
Tube
Datasheet:
VB30120S-M3/4W Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:VB30120S-M3/4W
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Vishay General Semiconductor - Diodes Division
Packaging:Tube
Product Status:Active
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):120 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:500 µA @ 120 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
Operating Temperature - Junction:-40°C ~ 150°C
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
1SS133M R0G
1SS133M R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 90V 150MA DO34
BD5200S_S2_00001
BD5200S_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
1N1343
1N1343
Solid State Inc.
DO4 6 AMP SILICON RECTIFIER
PG2010_R2_00001
PG2010_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
US1G
US1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
NRVB120LSFT1G
NRVB120LSFT1G
onsemi
DIODE SCHOTTKY 20V 1A SOD123
CRH01(TE85R,Q,M)
CRH01(TE85R,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 1A SFLAT
JANTXV1N5419/TR
JANTXV1N5419/TR
Microchip Technology
RECTIFIER UFR,FRR
D1131SH65TXPSA1
D1131SH65TXPSA1
Infineon Technologies
DIODE GEN PURP 6.5KV 1100A
UG1001-T
UG1001-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
RM 1
RM 1
Sanken
DIODE GEN PURP 400V 1A AXIAL
US1AHR3G
US1AHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
You May Also Be Interested In
P6SMB150CAHE3_A/H
P6SMB150CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SMC3K64CAHM3/57
SMC3K64CAHM3/57
Vishay General Semiconductor - Diodes Division
TVS DIODE 64VWM 103VC DO214AB
1.5KE39C-E3/54
1.5KE39C-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 31.6VWM 56.4VC 1.5KE
SMA5J13C-E3/5A
SMA5J13C-E3/5A
Vishay General Semiconductor - Diodes Division
TVS DIODE 13VWM 23.8VC DO214AC
SMCJ40AHE3/9AT
SMCJ40AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 40VWM 64.5VC DO214AB
VESD05A1-02V-G-18
VESD05A1-02V-G-18
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 12VC SOD523
SMB10J33AHM3_A/I
SMB10J33AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33VWM 53.3VC DO214AA
SMB10J40AHM3/H
SMB10J40AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 40VWM 64.5VC DO214AA
SE70PDHM3_A/H
SE70PDHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2.9A TO277A
FESF16GTHE3_A/P
FESF16GTHE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 16A ITO220AC
VS-1N1186A
VS-1N1186A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 40A DO203AB
RGP10MHE3/53
RGP10MHE3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL