NSB8MTHE3_B/P

NSB8MTHE3_B/P

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NSB8MTHE3_B/P
Description:
DIODE GEN PURP 1KV 8A TO263AB
Package:
Tube
Datasheet:
NSB8MTHE3_B/P Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NSB8MTHE3_B/P
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Vishay General Semiconductor - Diodes Division
Packaging:Tube
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 8 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:10 µA @ 1000 V
Capacitance @ Vr, F:55pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 0
Stock:
0 Can Ship Immediately
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