TPH3206LDGB

TPH3206LDGB

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TPH3206LDGB
Mfr.:
Description:
GANFET N-CH 650V 16A PQFN
Package:
Tube
Datasheet:
TPH3206LDGB Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TPH3206LDGB
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Transphorm
Packaging:Tube
Product Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 4.5 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 480 V
FET Feature:-
Power Dissipation (Max):81W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (8x8)
Package / Case:3-PowerDFN
In Stock: 0
Stock:
0 Can Ship Immediately
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