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See Product Specifications
| Part Number: | ULN2803APG,CN |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Arrays |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tube |
| Product Status: | Obsolete |
| Transistor Type: | 8 NPN Darlington |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 350mA, 2V |
| Power - Max: | 1.47W |
| Frequency - Transition: | - |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Through Hole |
| Package / Case: | 18-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 18-DIP |
