TRS6E65F,S1Q

TRS6E65F,S1Q

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TRS6E65F,S1Q
Description:
DODE SCHOTTKY 650V TO220
Package:
Tube
Datasheet:
TRS6E65F,S1Q Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TRS6E65F,S1Q
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tube
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):6A (DC)
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:30 µA @ 650 V
Capacitance @ Vr, F:22pF @ 650V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:175°C (Max)
In Stock: 0
Stock:
0 Can Ship Immediately
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For Use With
SRM84ALF_R1_00001
SRM84ALF_R1_00001
Panjit International Inc.
ULTRA LOW VF SCHOTTKY BARRIER RE
V1P6-M3/H
V1P6-M3/H
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ED303S_L2_00001
ED303S_L2_00001
Panjit International Inc.
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20F10
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onsemi
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