TRS4E65F,S1Q

TRS4E65F,S1Q

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TRS4E65F,S1Q
Description:
PB-F DIODE TO-220-2L V=650 IF=4A
Package:
Tube
Datasheet:
TRS4E65F,S1Q Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TRS4E65F,S1Q
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tube
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):4A (DC)
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:20 µA @ 650 V
Capacitance @ Vr, F:16pF @ 650V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:175°C (Max)
In Stock: 190
Stock:
190 Can Ship Immediately
  • Share:
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