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| Part Number: | TPN22006NH,LQ |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 6.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 22mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 710 pF @ 30 V |
| FET Feature: | - |
| Power Dissipation (Max): | 700mW (Ta), 18W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Package / Case: | 8-PowerVDFN |
