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See Product Specifications
| Part Number: | TPCC8008(TE12L,QM) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Cut Tape (CT) |
| Product Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 6.8mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1A |
| Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 10 V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1600 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 700mW (Ta), 30W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Package / Case: | 8-VDFN Exposed Pad |
