TK7A90E,S4X

TK7A90E,S4X

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TK7A90E,S4X
Description:
MOSFET N-CH 900V 7A TO220SIS
Package:
Tube
Datasheet:
TK7A90E,S4X Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TK7A90E,S4X
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
In Stock: 0
Stock:
0 Can Ship Immediately
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