RN4985FE,LF(CT

RN4985FE,LF(CT

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RN4985FE,LF(CT
Description:
NPN + PNP BRT Q1BSR2.2KOHM Q1BER
Package:
Tape & Reel (TR)
Datasheet:
RN4985FE,LF(CT Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RN4985FE,LF(CT
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tape & Reel (TR)
Product Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz, 200MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
In Stock: 6141
Stock:
6141 Can Ship Immediately
  • Share:
For Use With
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onsemi
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PUMD12/DG/B3,115
PUMD12/DG/B3,115
Nexperia USA Inc.
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