RN1909,LF(CT

RN1909,LF(CT

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RN1909,LF(CT
Description:
NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Package:
Tape & Reel (TR)
Datasheet:
RN1909,LF(CT Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RN1909,LF(CT
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tape & Reel (TR)
Product Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6
In Stock: 2392
Stock:
2392 Can Ship Immediately
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For Use With
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