RN1710,LF

RN1710,LF

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RN1710,LF
Description:
NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.
Package:
Tape & Reel (TR)
Datasheet:
RN1710,LF Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RN1710,LF
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tape & Reel (TR)
Product Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:USV
In Stock: 6000
Stock:
6000 Can Ship Immediately
  • Share:
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