Images are for reference only
See Product Specifications
| Part Number: | RN1426TE85LF |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 800 mA |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Resistor - Base (R1): | 1 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 100mA, 1V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 50mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 300 MHz |
| Power - Max: | 200 mW |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | S-Mini |
