RN1112,LXHF(CT

RN1112,LXHF(CT

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RN1112,LXHF(CT
Description:
AUTO AEC-Q NPN Q1BSR=22K, VCEO=5
Package:
Tape & Reel (TR)
Datasheet:
RN1112,LXHF(CT Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RN1112,LXHF(CT
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tape & Reel (TR)
Product Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250 MHz
Power - Max:100 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SSM
In Stock: 0
Stock:
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