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See Product Specifications
| Part Number: | RN1110MFV,L3F |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100 mA |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | - |
| Power - Max: | 150 mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | VESM |
