RN1106MFV,L3F

RN1106MFV,L3F

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RN1106MFV,L3F
Description:
TRANS PREBIAS NPN 50V 0.1A VESM
Package:
Tape & Reel (TR)
Datasheet:
RN1106MFV,L3F Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RN1106MFV,L3F
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tape & Reel (TR)
Product Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM
In Stock: 3150
Stock:
3150 Can Ship Immediately
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