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Part Number: | MT3S20TU(TE85L) |
Category: | Discrete Semiconductor Products |
Subcategory: | Transistors - Bipolar (BJT) - RF |
Manufacturer: | Toshiba Semiconductor and Storage |
Packaging: | Tape & Reel (TR) |
Product Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1.45dB @ 20mA, 5V |
Gain: | 12dB |
Power - Max: | 900mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Current - Collector (Ic) (Max): | 80mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Lead |
Supplier Device Package: | UFM |