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See Product Specifications
| Part Number: | MT3S111TU,LF |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 6V |
| Frequency - Transition: | 10GHz |
| Noise Figure (dB Typ @ f): | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
| Gain: | 12.5dB |
| Power - Max: | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 3-SMD, Flat Lead |
| Supplier Device Package: | UFM |
