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See Product Specifications
| Part Number: | MT3S111P(TE12L,F) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 6V |
| Frequency - Transition: | 8GHz |
| Noise Figure (dB Typ @ f): | 1.25dB @ 1GHz |
| Gain: | 10.5dB |
| Power - Max: | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | PW-MINI |
