HN4B102J(TE85L,F)

HN4B102J(TE85L,F)

Images are for reference only
See Product Specifications

HN4B102J(TE85L,F)
Description:
PB-F POWER TRANSISTOR SMV MOQ=30
Package:
Tape & Reel (TR)
Datasheet:
HN4B102J(TE85L,F) Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:HN4B102J(TE85L,F)
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tape & Reel (TR)
Product Status:Active
Transistor Type:-
Current - Collector (Ic) (Max):-
Voltage - Collector Emitter Breakdown (Max):-
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:-
Frequency - Transition:-
Operating Temperature:-
Mounting Type:-
Package / Case:-
Supplier Device Package:-
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
BC846BPN_R1_00001
BC846BPN_R1_00001
Panjit International Inc.
DUAL SURFACE MOUNT NPN/PNP TRANS
LS351 TO-71 6L
LS351 TO-71 6L
Linear Integrated Systems, Inc.
TIGHTLY MATCHED, MONOLITHIC DUAL
IT130 SOIC 8L
IT130 SOIC 8L
Linear Integrated Systems, Inc.
TIGHTLY MATCHED, MONOLITHIC DUAL
HN1B04FE-GR,LF
HN1B04FE-GR,LF
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A ES6
FMB5551
FMB5551
onsemi
TRANS 2NPN 160V 0.6A SUPERSOT-6
XP0650100L
XP0650100L
Panasonic Electronic Components
TRANS 2NPN 50V 0.1A SMINI6
MBT3906DW1T1
MBT3906DW1T1
onsemi
TRANS 2PNP 40V 0.2A SOT363
CA3083MZ96
CA3083MZ96
Renesas Electronics America Inc
TRANS 5NPN 15V 0.1A 16SOIC
ULN2803AFWG,C,EL
ULN2803AFWG,C,EL
Toshiba Semiconductor and Storage
TRANS 8NPN DARL 50V 0.5A 18SOL
JAN2N5795
JAN2N5795
Microchip Technology
NPN TRANSISTOR
BC847BSHX
BC847BSHX
Nexperia USA Inc.
BC847BSHX
EMT3T2R
EMT3T2R
Rohm Semiconductor
TRANS 2PNP 50V 0.15A 6EMT
You May Also Be Interested In
1SS387,L3F
1SS387,L3F
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA ESC
2SB1457(T6DW,F,M)
2SB1457(T6DW,F,M)
Toshiba Semiconductor and Storage
TRANS PNP 100V 2A TO92MOD
RN2108,LXHF(CT
RN2108,LXHF(CT
Toshiba Semiconductor and Storage
AUTO AEC-Q TR PNP Q1BSR=22KOHM,
RN1112,LXHF(CT
RN1112,LXHF(CT
Toshiba Semiconductor and Storage
AUTO AEC-Q NPN Q1BSR=22K, VCEO=5
SSM3K56CT,L3F
SSM3K56CT,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 800MA CST3
SSM3J56ACT,L3F
SSM3J56ACT,L3F
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.4A CST3
SSM6H19NU,LF
SSM6H19NU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 2A 6UDFN
74VHC125FT
74VHC125FT
Toshiba Semiconductor and Storage
IC BUF NON-INVERT 5.5V 14TSSOP
TCR8BM25A,L3F
TCR8BM25A,L3F
Toshiba Semiconductor and Storage
800MA LDO, VOUT=2.5V, DROPOUT=17
TLP5214A(D4-TP,E
TLP5214A(D4-TP,E
Toshiba Semiconductor and Storage
OPTOCOUPLER IGBT 4A 110C OPR TEM
TLP2735(TP,E
TLP2735(TP,E
Toshiba Semiconductor and Storage
PHOTOCOUPLER; HIGH-SPEED; IPM DR
TLP291-4(V4GBTPE
TLP291-4(V4GBTPE
Toshiba Semiconductor and Storage
OPTOISOLTR 2.5KV 4CH TRANS 16SO