Images are for reference only
See Product Specifications
| Part Number: | HN4B01JE(TE85L,F) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Arrays |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | NPN, PNP (Emitter Coupled) |
| Current - Collector (Ic) (Max): | 150mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 10MA, 100MA |
| Power - Max: | 100mW |
| Frequency - Transition: | 80MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-553 |
| Supplier Device Package: | ESV |
