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See Product Specifications
| Part Number: | HN3C10FUTE85LF |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max): | 12V |
| Frequency - Transition: | 7GHz |
| Noise Figure (dB Typ @ f): | 1.1dB @ 1GHz |
| Gain: | 11.5dB |
| Power - Max: | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 20mA, 10V |
| Current - Collector (Ic) (Max): | 80mA |
| Operating Temperature: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | US6 |
