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See Product Specifications
| Part Number: | GT60N321(Q) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tube |
| Product Status: | Obsolete |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 1000 V |
| Current - Collector (Ic) (Max): | 60 A |
| Current - Collector Pulsed (Icm): | 120 A |
| Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 60A |
| Power - Max: | 170 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | - |
| Td (on/off) @ 25°C: | 330ns/700ns |
| Test Condition: | - |
| Reverse Recovery Time (trr): | 2.5 µs |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3PL |
| Supplier Device Package: | TO-3P(LH) |
