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See Product Specifications
| Part Number: | GT50JR22(STA1,E,S) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tube |
| Product Status: | Active |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | - |
| Current - Collector (Ic) (Max): | - |
| Current - Collector Pulsed (Icm): | - |
| Vce(on) (Max) @ Vge, Ic: | - |
| Power - Max: | - |
| Switching Energy: | - |
| Input Type: | - |
| Gate Charge: | - |
| Td (on/off) @ 25°C: | - |
| Test Condition: | - |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | - |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
