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| Part Number: | GT30J341,Q | 
| Category: | Discrete Semiconductor Products | 
| Subcategory: | Transistors - IGBTs - Single | 
| Manufacturer: | Toshiba Semiconductor and Storage | 
| Packaging: | Tray | 
| Product Status: | Active | 
| IGBT Type: | - | 
| Voltage - Collector Emitter Breakdown (Max): | 600 V | 
| Current - Collector (Ic) (Max): | 59 A | 
| Current - Collector Pulsed (Icm): | 120 A | 
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A | 
| Power - Max: | 230 W | 
| Switching Energy: | 800µJ (on), 600µJ (off) | 
| Input Type: | Standard | 
| Gate Charge: | - | 
| Td (on/off) @ 25°C: | 80ns/280ns | 
| Test Condition: | 300V, 30A, 24Ohm, 15V | 
| Reverse Recovery Time (trr): | 50 ns | 
| Operating Temperature: | 175°C (TJ) | 
| Mounting Type: | Through Hole | 
| Package / Case: | TO-3P-3, SC-65-3 | 
| Supplier Device Package: | TO-3P(N) |