GT30J121(Q)

GT30J121(Q)

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GT30J121(Q)
Description:
IGBT 600V 30A 170W TO3PN
Package:
Tube
Datasheet:
GT30J121(Q) Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT30J121(Q)
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Single
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tube
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 30A
Power - Max:170 W
Switching Energy:1mJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:90ns/300ns
Test Condition:300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P(N)
In Stock: 0
Stock:
0 Can Ship Immediately
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