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See Product Specifications
| Part Number: | GT10J312(Q) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tube |
| Product Status: | Obsolete |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 10 A |
| Current - Collector Pulsed (Icm): | 20 A |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 10A |
| Power - Max: | 60 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | - |
| Td (on/off) @ 25°C: | 400ns/400ns |
| Test Condition: | 300V, 10A, 100Ohm, 15V |
| Reverse Recovery Time (trr): | 200 ns |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-220SM |
