DF6D6UFE,L3F

DF6D6UFE,L3F

Images are for reference only
See Product Specifications

DF6D6UFE,L3F
Description:
TVS DIODE 5.5VWM 20VC ES6
Package:
Tape & Reel (TR)
Datasheet:
DF6D6UFE,L3F Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:DF6D6UFE,L3F
Category:Circuit Protection
Subcategory:TVS - Diodes
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tape & Reel (TR)
Product Status:Active
Type:Zener
Unidirectional Channels:-
Bidirectional Channels:2
Voltage - Reverse Standoff (Typ):5.5V (Max)
Voltage - Breakdown (Min):5.7V
Voltage - Clamping (Max) @ Ipp:20V
Current - Peak Pulse (10/1000µs):1.5A (8/20µs)
Power - Peak Pulse:30W
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:1.5pF @ 1MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
SMF15A
SMF15A
Littelfuse Inc.
TVS DIODE 15VWM 24.4VC SOD123F
P4KE68A_R2_00001
P4KE68A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
SMFE24AH
SMFE24AH
Eaton - Electronics Division
TVS DIODE 24VWM 38.9VC UNI
P4KE7.5A-B
P4KE7.5A-B
Littelfuse Inc.
TVS DIODE 6.4VWM 11.3VC DO204AL
1.5KE200A-G
1.5KE200A-G
Comchip Technology
TVS DIODE 171VWM 274VC DO201
MPLAD30KP58CAE3/TR
MPLAD30KP58CAE3/TR
Microchip Technology
TVS DIODE 58VWM 93.6VC PLAD
MXDA3KP36CA
MXDA3KP36CA
Microchip Technology
BI-DIRECTIONAL TVS_16L DIP
P6SMB36
P6SMB36
Littelfuse Inc.
TVS DIODE 30.8VWM 52.4VC DO214AA
P6SMB22AHE3/52
P6SMB22AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
MSMBJ2K5.0
MSMBJ2K5.0
Microsemi Corporation
TVS DIODE 5VWM 7.6VC SMBJ
1.5KE150CA R0G
1.5KE150CA R0G
Taiwan Semiconductor Corporation
TVS DIODE 128VWM 207VC DO201
P4KE33CAHB0G
P4KE33CAHB0G
Taiwan Semiconductor Corporation
TVS DIODE 28.2VWM 45.7VC DO204AL
You May Also Be Interested In
1SS226,LF
1SS226,LF
Toshiba Semiconductor and Storage
PB-F S-MINI M8 DIODE (LF), IFM=3
RN1967FE(TE85L,F)
RN1967FE(TE85L,F)
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
RN2104MFV,L3XHF(CT
RN2104MFV,L3XHF(CT
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP Q1BSR=47K, Q1BER=
TK16J60W5,S1VQ
TK16J60W5,S1VQ
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
2SK209-BL(TE85L,F)
2SK209-BL(TE85L,F)
Toshiba Semiconductor and Storage
TRANS SJT N-CH 10MA SC59
TK6A45DA(STA4,Q,M)
TK6A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 5.5A TO220SIS
GT30N135SRA,S1E
GT30N135SRA,S1E
Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=30A
AB3X2X6W
AB3X2X6W
Toshiba Semiconductor and Storage
FERRITE CORE SOLID 1.5MM
TC74VHC574FK(EL,K)
TC74VHC574FK(EL,K)
Toshiba Semiconductor and Storage
IC FF D-TYPE SNGL 8BIT 20VSSOP
TCR2DG32,LF
TCR2DG32,LF
Toshiba Semiconductor and Storage
LOW DROPOUT (LDO) IOUT: 200MA PD
TLP3910(C20-TP,E
TLP3910(C20-TP,E
Toshiba Semiconductor and Storage
PHOTOVOLTAIC COUPLER; HIGH VOC;
TLP525G(LF1,F)
TLP525G(LF1,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER