BAS316,H3F

BAS316,H3F

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BAS316,H3F
Description:
DIODE GEN PURP 100V 250MA USC
Package:
Tape & Reel (TR)
Datasheet:
BAS316,H3F Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:BAS316,H3F
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Toshiba Semiconductor and Storage
Packaging:Tape & Reel (TR)
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3 ns
Current - Reverse Leakage @ Vr:200 nA @ 80 V
Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:USC
Operating Temperature - Junction:150°C (Max)
In Stock: 0
Stock:
0 Can Ship Immediately
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For Use With
DA573S6-TL-H-ON
DA573S6-TL-H-ON
onsemi
SILICON DIFFUSED JUNCTION TYPE D
HS1KAL
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Taiwan Semiconductor Corporation
75NS, 1A, 800V, HIGH EFFICIENT R
SVM1060UB_R2_00001
SVM1060UB_R2_00001
Panjit International Inc.
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BAV203-GS18
BAV203-GS18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD80
VS-1EFH01-M3/I
VS-1EFH01-M3/I
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BYT54G-TAP
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DIODE AVALANCHE 400V 1.25A SOD57
R504150
R504150
Microchip Technology
STD RECTIFIER
16FR20
16FR20
Solid State Inc.
16 AMP SILCON RECTIFIER DO4 AK
CMS11(TE12L)
CMS11(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 2A MFLAT
MBRS10150 MNG
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S2AH
S2AH
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
CPW2-1200-S010B-FR1
CPW2-1200-S010B-FR1
Wolfspeed, Inc.
DIODE SCHOTTKY 1200V 10A
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