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See Product Specifications
| Part Number: | 2SD1221-Y(Q) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3 A |
| Voltage - Collector Emitter Breakdown (Max): | 60 V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 300mA, 3A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 5V |
| Power - Max: | 1 W |
| Frequency - Transition: | 3MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PW-MOLD |
