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See Product Specifications
| Part Number: | 2SA1955FVBTPL3Z |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 400 mA |
| Voltage - Collector Emitter Breakdown (Max): | 12 V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 10mA, 2V |
| Power - Max: | 100 mW |
| Frequency - Transition: | 130MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | VESM |
