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See Product Specifications
| Part Number: | 2SA1931,NETQ(M |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 5 A |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
| Power - Max: | 2 W |
| Frequency - Transition: | 60MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220NIS |
