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See Product Specifications
| Part Number: | 2SA1930(LBS2MATQ,M |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2 A |
| Voltage - Collector Emitter Breakdown (Max): | 180 V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max): | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
| Power - Max: | 2 W |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220NIS |
