TPS1101DR

TPS1101DR

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TPS1101DR
Description:
MOSFET P-CH 15V 2.3A 8SOIC
Package:
Tape & Reel (TR)
Datasheet:
TPS1101DR Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TPS1101DR
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Texas Instruments
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):15 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.25 nC @ 10 V
Vgs (Max):+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):791mW (Ta)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
In Stock: 0
Stock:
0 Can Ship Immediately
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