TST30H200CW

TST30H200CW

Images are for reference only
See Product Specifications

TST30H200CW
Description:
DIODE SCHOTTKY 200V 15A TO220AB
Package:
Tube
Datasheet:
TST30H200CW Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TST30H200CW
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tube
Product Status:Active
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:920 mV @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:150 µA @ 200 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 1941
Stock:
1941 Can Ship Immediately
  • Share:
For Use With
BYT62-TAP
BYT62-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCH 2.4KV 350MA SOD57
VS-8ETU04-1-M3
VS-8ETU04-1-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO262AA
VS-E7MH0112HM3/I
VS-E7MH0112HM3/I
Vishay General Semiconductor - Diodes Division
1A, 1200V GENERATION 7 FRED HYPE
CURA107-HF
CURA107-HF
Comchip Technology
DIODE GEN PURP 1KV 1A DO214AC
ACURB201-HF
ACURB201-HF
Comchip Technology
AUTOMOTIVE DIODE GEN PURP 50V 2A
JANTX1N4459
JANTX1N4459
Microchip Technology
DIODE GEN PURP 1KV 15A DO203AA
R7004203XXUA
R7004203XXUA
Powerex Inc.
DIODE GEN PURP 4.2KV 300A DO200
H1D-F1-0000HF
H1D-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A SOD123FL
ES3DB-13
ES3DB-13
Diodes Incorporated
DIODE GEN PURP 200V 3A SMB
VS-MBR1035PBF
VS-MBR1035PBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 10A TO220AC
RGP10KE-E3/91
RGP10KE-E3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
JANTXV1N6663US/TR
JANTXV1N6663US/TR
Microchip Technology
STD RECTIFIER
You May Also Be Interested In
P6SMB12AH
P6SMB12AH
Taiwan Semiconductor Corporation
TVS DIODE 10.2VWM 16.7VC DO214AA
P4KE82A B0G
P4KE82A B0G
Taiwan Semiconductor Corporation
TVS DIODE 70.1VWM 113VC DO204AL
PGSMAJ28AHM2G
PGSMAJ28AHM2G
Taiwan Semiconductor Corporation
TVS DIODE 28VWM 45.4VC DO214AC
SFF2001GH
SFF2001GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 20A 50V ITO220AB
HS1FL MHG
HS1FL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
SFAS1008GHMNG
SFAS1008GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB
SF13G A0G
SF13G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO204AL
SFAF1606G
SFAF1606G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A ITO220AC
SR802H
SR802H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 8A 20V DO-201AD
BZV55B2V7 L0G
BZV55B2V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZV55B5V1 L1G
BZV55B5V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZD17C220P RFG
BZD17C220P RFG
Taiwan Semiconductor Corporation
DIODE ZENER 220V 800MW SUB SMA