TSM950N10CW RPG

TSM950N10CW RPG

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TSM950N10CW RPG
Description:
MOSFET N-CH 100V 6.5A SOT223
Package:
Tape & Reel (TR)
Datasheet:
TSM950N10CW RPG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM950N10CW RPG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:95mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 50 V
FET Feature:-
Power Dissipation (Max):9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
In Stock: 1946
Stock:
1946 Can Ship Immediately
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