TSM80N1R2CL C0G

TSM80N1R2CL C0G

Images are for reference only
See Product Specifications

TSM80N1R2CL C0G
Description:
MOSFET N-CH 800V 5.5A TO262S
Package:
Tube
Datasheet:
TSM80N1R2CL C0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM80N1R2CL C0G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:685 pF @ 100 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262S (I2PAK)
Package / Case:TO-262-3 Short Leads, I²Pak
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
RJK03M7DPA-00#J5A
RJK03M7DPA-00#J5A
Renesas Electronics America Inc
MOSFET N-CH 30V 30A 8WPAK
5HP01C-TB-E
5HP01C-TB-E
onsemi
5HP01 - 50V, 70MA, P-CHANNEL MOS
SQ3469EV-T1_GE3
SQ3469EV-T1_GE3
Vishay Siliconix
MOSFET P-CH 20V 8A 6TSOP
IRFR4105TRLPBF
IRFR4105TRLPBF
Infineon Technologies
MOSFET N-CH 55V 27A DPAK
IXFA12N50P-TRL
IXFA12N50P-TRL
IXYS
MOSFET N-CH 500V 12A TO263
IRL2910SPBF
IRL2910SPBF
Infineon Technologies
MOSFET N-CH 100V 55A D2PAK
TPCF8102(TE85L,F,M
TPCF8102(TE85L,F,M
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 6A VS-8
SI5449DC-T1-GE3
SI5449DC-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 3.1A 1206-8
NDF02N60ZH
NDF02N60ZH
onsemi
MOSFET N-CH 600V 2.4A TO220FP
IRFS7530PBF
IRFS7530PBF
Infineon Technologies
MOSFET N-CH 60V 195A D2PAK
IPD06P003NATMA1
IPD06P003NATMA1
Infineon Technologies
MOSFET P-CH 60V 22A TO252-3
SCT3022KLGC11
SCT3022KLGC11
Rohm Semiconductor
SICFET N-CH 1200V 95A TO247N
You May Also Be Interested In
SMDJ36CA R7G
SMDJ36CA R7G
Taiwan Semiconductor Corporation
TVS DIODE 36VWM 58.1VC DO214AB
BZW04-40HA0G
BZW04-40HA0G
Taiwan Semiconductor Corporation
TVS DIODE 40.2VWM 64.8VC DO204AL
P6KE43A B0G
P6KE43A B0G
Taiwan Semiconductor Corporation
TVS DIODE 36.8VWM 59.3VC DO204AC
PGSMAJ100CAHM2G
PGSMAJ100CAHM2G
Taiwan Semiconductor Corporation
TVS DIODE 100VWM 162VC DO214AC
PGSMAJ16CA M2G
PGSMAJ16CA M2G
Taiwan Semiconductor Corporation
TVS DIODE 16VWM 26VC DO214AC
SMF40AHRVG
SMF40AHRVG
Taiwan Semiconductor Corporation
TVS DIODE 40VWM 64.5VC SOD123W
RS3B R7G
RS3B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
SF1607GHC0G
SF1607GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO220AB
SR806HB0G
SR806HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 8A DO201AD
1PGSMA4746 R3G
1PGSMA4746 R3G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 1.25W DO214AC
BZD27C15PHMHG
BZD27C15PHMHG
Taiwan Semiconductor Corporation
DIODE ZENER 14.7V 1W SUB SMA
1N4740A A0G
1N4740A A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 1W DO204AL