TSM680P06CI C0G

TSM680P06CI C0G

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TSM680P06CI C0G
Description:
MOSFET P-CH 60V 18A ITO220
Package:
Bulk
Datasheet:
TSM680P06CI C0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM680P06CI C0G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Bulk
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:68mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 30 V
FET Feature:-
Power Dissipation (Max):17W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220
Package / Case:TO-220-3 Full Pack, Isolated Tab
In Stock: 0
Stock:
0 Can Ship Immediately
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