TSM4N90CI C0G

TSM4N90CI C0G

Images are for reference only
See Product Specifications

TSM4N90CI C0G
Description:
MOSFET N-CH 900V 4A ITO220AB
Package:
Tube
Datasheet:
TSM4N90CI C0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM4N90CI C0G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tube
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:955 pF @ 25 V
FET Feature:-
Power Dissipation (Max):38.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220AB
Package / Case:TO-220-3 Full Pack, Isolated Tab
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
RFP2P10
RFP2P10
Harris Corporation
P-CHANNEL POWER MOSFET
STY60NK30Z
STY60NK30Z
STMicroelectronics
MOSFET N-CH 300V 60A MAX247
UPA2730TP-E2-AZ
UPA2730TP-E2-AZ
Renesas
UPA2730 - POWER FIELD-EFFECT TRA
ZXMN3A03E6TA
ZXMN3A03E6TA
Diodes Incorporated
MOSFET N-CH 30V 3.7A SOT-23-6
IRFR1205TRPBF
IRFR1205TRPBF
Infineon Technologies
MOSFET N-CH 55V 44A DPAK
IXTH1N200P3
IXTH1N200P3
IXYS
MOSFET N-CH 2000V 1A TO247
MCMN2014HE3-TP
MCMN2014HE3-TP
Micro Commercial Co
N-CHANNEL MOSFET, DFN2020-6LE
RJK0455DPB-00#J5
RJK0455DPB-00#J5
Renesas Electronics America Inc
MOSFET N-CH 40V 45A LFPAK
IPW65R060CFD7XKSA1
IPW65R060CFD7XKSA1
Infineon Technologies
650V FET COOLMOS TO247
TK12A53D(STA4,Q,M)
TK12A53D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 525V 12A TO220SIS
NTMFS4897NFT3G
NTMFS4897NFT3G
onsemi
MOSFET N-CH 30V 17A/171A 5DFN
IXTM24N50L
IXTM24N50L
IXYS
POWER MOSFET TO-3
You May Also Be Interested In
P4KE36AH
P4KE36AH
Taiwan Semiconductor Corporation
TVS DIODE 30.8VWM 49.9VC DO204AL
BZW04-23 R1G
BZW04-23 R1G
Taiwan Semiconductor Corporation
TVS DIODE 23.1VWM 37.5VC DO204AL
PGSMAJ8.5AHF2G
PGSMAJ8.5AHF2G
Taiwan Semiconductor Corporation
TVS DIODE 8.5VWM 14.4VC DO214AC
1.5SMC130CA R7
1.5SMC130CA R7
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
GP1604HC0G
GP1604HC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 400V 16A TO220AB
SR30100PTHC0G
SR30100PTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO247
SS310H
SS310H
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
SF31G R0G
SF31G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
S5D M6G
S5D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO214AB
SRAF540
SRAF540
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 5A ITO220AC
BZD17C36P M2G
BZD17C36P M2G
Taiwan Semiconductor Corporation
DIODE ZENER 36V 800MW SUB SMA
TPC817D C9G
TPC817D C9G
Taiwan Semiconductor Corporation
OPTOISO 5KV TRANS 4DIP