TSM4N80CZ C0G

TSM4N80CZ C0G

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TSM4N80CZ C0G
Description:
MOSFET N-CHANNEL 800V 4A TO220
Package:
Tube
Datasheet:
TSM4N80CZ C0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM4N80CZ C0G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tube
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:955 pF @ 25 V
FET Feature:-
Power Dissipation (Max):38.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
In Stock: 0
Stock:
0 Can Ship Immediately
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