TSM3N100CP ROG

TSM3N100CP ROG

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TSM3N100CP ROG
Description:
MOSFET N-CH 1000V 2.5A TO252
Package:
Cut Tape (CT)
Datasheet:
TSM3N100CP ROG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM3N100CP ROG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Cut Tape (CT)
Product Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:664 pF @ 25 V
FET Feature:-
Power Dissipation (Max):99W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
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