TSM2NB60CH C5G

TSM2NB60CH C5G

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TSM2NB60CH C5G
Description:
MOSFET N-CHANNEL 600V 2A TO251
Package:
Tube
Datasheet:
TSM2NB60CH C5G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM2NB60CH C5G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tube
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:249 pF @ 25 V
FET Feature:-
Power Dissipation (Max):44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251 (IPAK)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
In Stock: 0
Stock:
0 Can Ship Immediately
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