TSM22P10CI C0G

TSM22P10CI C0G

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TSM22P10CI C0G
Description:
MOSFET P-CH 100V 22A ITO220
Package:
Bulk
Datasheet:
TSM22P10CI C0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM22P10CI C0G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Bulk
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:140mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2250 pF @ 30 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220
Package / Case:TO-220-3 Full Pack, Isolated Tab
In Stock: 0
Stock:
0 Can Ship Immediately
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