TS10P04GHC2G

TS10P04GHC2G

Images are for reference only
See Product Specifications

TS10P04GHC2G
Description:
BRIDGE RECT 1P 400V 10A TS-6P
Package:
Tube
Datasheet:
TS10P04GHC2G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TS10P04GHC2G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Bridge Rectifiers
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tube
Product Status:Active
Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):400 V
Current - Average Rectified (Io):10 A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 10 A
Current - Reverse Leakage @ Vr:10 µA @ 400 V
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:4-SIP, TS-6P
Supplier Device Package:TS-6P
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
KBPC3504W-G
KBPC3504W-G
Comchip Technology
BRIDGE RECT 1P 400V 35A KBPC-W
GBPC1204W
GBPC1204W
onsemi
BRIDGE RECT 1PH 400V 12A GBPC-W
DB103S
DB103S
SMC Diode Solutions
BRIDGE RECT 1PHASE 200V 1A DB-S
CD-MMBL110S-H
CD-MMBL110S-H
Bourns Inc.
DIO BR VRRM 1000V 1A MMBL 7" REE
B40C1000G-E4/51
B40C1000G-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 65V 1A WOG
GBP208-B1-0000HF
GBP208-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 800V 2A GBP
KBPC2510-A1-0000
KBPC2510-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 25A GBPC25
KBPC3510W-A1-0000
KBPC3510W-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 35A GBPCW-G
KBP06ML-6161E4/51
KBP06ML-6161E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 1.5A KBPM
DBLS104GHC1G
DBLS104GHC1G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 400V 1A DBLS
GBJL1008-BP
GBJL1008-BP
Micro Commercial Co
DIODE BRIDGE GBJL
BU2010L-7001M3/51
BU2010L-7001M3/51
Vishay General Semiconductor - Diodes Division
DIODE BRIDGE 20A 1000V
You May Also Be Interested In
SMCJ26CA V7G
SMCJ26CA V7G
Taiwan Semiconductor Corporation
TVS DIODE 26VWM 42.1VC DO214AB
SMAJ20CAH
SMAJ20CAH
Taiwan Semiconductor Corporation
TVS DIODE 20VWM 32.4VC DO214AC
P4KE120CAHR1G
P4KE120CAHR1G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO204AL
P4SMA13CA R3G
P4SMA13CA R3G
Taiwan Semiconductor Corporation
TVS DIODE 11.1VWM 18.2VC DO214AC
P4SMA47CA R3G
P4SMA47CA R3G
Taiwan Semiconductor Corporation
TVS DIODE 40.2VWM 64.8VC DO214AC
SMBJ30AHR5G
SMBJ30AHR5G
Taiwan Semiconductor Corporation
TVS DIODE 30VWM 48.4VC DO214AA
PGSMAJ7.5CA F2G
PGSMAJ7.5CA F2G
Taiwan Semiconductor Corporation
TVS DIODE 7.5VWM 12.9VC DO214AC
SMCJ15A R6
SMCJ15A R6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
1T6G A0G
1T6G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
BZD27C56PHMHG
BZD27C56PHMHG
Taiwan Semiconductor Corporation
DIODE ZENER 56V 1W SUB SMA
BZS55B13 RAG
BZS55B13 RAG
Taiwan Semiconductor Corporation
DIODE ZENER 500MW 1206
TSM6866SDCA RVG
TSM6866SDCA RVG
Taiwan Semiconductor Corporation
MOSFET 2 N-CH 20V 6A 8TSSOP